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Semiconductor device and method of manufac... [(10)CN108269780]

[Category : - ELECTRONICS]
[Viewed 71 times]

A semiconductor device includes a substrate, a patterned conductive layer on the substrate, a passivation layer on the substrate and surrounding the patterned conductive layer, a first under bump metallurgy (UBM) and a second UBM on the passivation layer and electrically connected to the patterned conductive layer, and an isolation structure on the passivation layer and between the first UBM and the second UBM.

Patent publications:

 CN 108269780
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rayfw (Taiwan)

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