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TSV structure

[Category : - ELECTRONICS]
[Viewed 68 times]

The present invention relates to a semiconductor device and a semiconductor package having the same. The semiconductor device includes a conductive element. The conductive element is disposed on a protruded conductive via and barrier layer, and covers a sidewall of the barrier layer. Whereby, the conductive element can protect the protruded conductive via and barrier layer from being damaged. Further, the size of the conductive element is larger than the protruded conductive via, thus it is easy to perform a probe test process.

Patent publications:

 TW 2011104661
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Seller:

rayfw (Taiwan)

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