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TSV structures

[Category : - ELECTRONICS]
[Viewed 180 times]

This patent describes a semiconductor subassembly and its manufacturing method to address issues in the prior art. The semiconductor subassembly includes a silicon substrate with a first and second passivation layer, silicon perforations, and conductive poles. The manufacturing method involves placing the silicon substrate on a support plate, forming silicon perforations, creating conductive poles, and covering them with passivation layers. The passivation layers are etched to form a flat part and an annulus, reducing the risk of short circuits and improving the product's reliability. The method also includes wet-type etching and the formation of projections on the active surface of the silicon substrate.

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rayfw (Taiwan)

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