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Structure and manufacture method of circuit substrate

[Category : - ELECTRONICS]
[Viewed 216 times]

The invention discloses a structure and a manufacture method of a circuit substrate. The structure of the circuit substrate mainly comprises a silicon oxide substrate layer and a plurality of wires, and each wire perpendicularly penetrates through the silicon oxide substrate layer. The silicon oxide substrate layer and the plurality of the wires can replace existing silicon distance layers and silicon penetrating guide holes to function to be applied to electric connection between an upper surface circuit and a lower surface circuit which are located in a distance piece. The manufacture of the existing silicon penetrating guide holes is time-wasting, by contrast, the manufacture method of the circuit substrate combines a wire bonding technology and a sol-gel method to manufacture the wires and the silicon oxide substrate layer, machining time can be saved, and manufacture cost can be reduced.

Patent publications:

CN 103151336

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rayfw (Taiwan)

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