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Capacitor structure and manufacturing method thereof

[Category : - ELECTRONICS]
[Viewed 197 times]

The invention discloses a capacitor structure and a manufacturing method thereof. The capacitor structure comprises a first metal layer, a tantalum metal layer, a compound material layer and a second metal layer, wherein the tantalum metal layer is arranged on the first metal layer; the compound material layer is arranged on the tantalum metal layer; the second metal layer is arranged on the compound material layer; and the compound material layer contains a tantalum pentoxide substrate and is doped with titanium dioxide compound material grains. According to the invention, a tantalum metal oxide layer is formed on the tantalum metal layer through anodic oxidation treatment, a titanium salt solution is utilized to form the compound material layer through a heating process and the compound material layer is served as a dielectric material layer of the capacitor structure. Compared with the present dry manufacturing method adopting a sedimentation technology which requires longer sedimentation time and higher equipment and manufacturing cost, a wet manufacturing method provided by the invention has the advantages that the time for manufacturing a capacitor is saved, the cost is lowered and the electric performance of the capacitor structure is relatively increased.

Patent publications:

CN 103151339

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rayfw (Taiwan)

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