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Semiconductor element and sealing structure thereof

[Category : - ELECTRONICS]
[Viewed 43 times]

The invention discloses a semiconductor element and a manufacture method thereof and a sealing structure thereof. The semiconductor element comprises a semiconductor base material, a circuit layer, a metal layer and a passivation layer. The semiconductor base material is provided with a first surface, a second surface and a plurality of conduction posts. The second surface is arranged opposite to the first surface. Each conduction post penetrates through the semiconductor base material and protrudes out of the second surface. The circuit layer is arranged on the first surface of the semiconductor base material and electrically connected with the conduction posts. The metal layer is formed on an exposed top face of each conduction post. The passivation layer is formed on the second surface of the semiconductor base material. The passivation layer is positive pole oxide of the metal layer. The passivation layer is thin in thickness and low in manufacture cost and a semiconductor element warping problem can not occur easily.

Patent publications:

CN 103165543

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rayfw (Taiwan)

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