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Gate-All-Around CMOSFET devices

[Category : - OTHER]
[Viewed 1258 times]

A GAA (Gate-All-Around) CMOSFET device includes a semiconductor substrate, a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The surfaces of the first channel and the second channel are substantially surrounded by the gate region. A buried insulation layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the semiconductor substrate to isolate them from one another. The structure is simple, compact and highly integrated, has high carrier mobility, and avoids polysilicon gate depletion and short channel effect.

Patent publications:

 US 8354721
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mems (China)

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