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SEMICONDUCTOR MEMORY DEVICE FOR USE IN ELECTRICALLY ALTERABLE ROM

[Category : - ELECTRICITY & LIGHTING]
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Our first invention is Paten US5363329.

The instant invention is continuation of previous Patent (US5363329) and improves characteristics of the memory elements in several times. It's opens a nonvolatile trigger and fixes superconductivity.

An electrically alterable thin film memory device which can be switched from a high resistance state to a low resistance state. The device increases the concentration of electrically active impurities at correspondent electrodes to which respect impurities would electro migrate during a large number of set-reset cycles. The device comprises a layered structure with memory layers formed on an interface of two regions as the result of the mutual mixing and migration of their constituents. One region contains an electrically active donor impurity. A thin layer of dielectric is placed in the other region. Each of the memory layers includes an interface of chalcogenide films.

UAB SARGASO GRUPE
Zemaites 22-3, Vilnius, Lithuania
Vladislav Nichipor | CEO
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Patent publications:

US 20170069839

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ladislauo (Lithuania)

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